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Other articles related with "specific contact resistance"：
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37305 |
Pan Dai(代盼), Jianya Lu(卢建娅), Ming Tan(谭明), Qingsong Wang(王青松), Yuanyuan Wu(吴渊渊), Lian Ji(季莲), Lifeng Bian(边历峰), Shulong Lu(陆书龙), Hui Yang(杨辉) |
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Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell |
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Chin. Phys. B
2017 Vol.26 (3): 37305-037305
[Abstract]
(879)
[HTML 1 KB]
[PDF 327 KB]
(555)
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66803 |
Dai Chong-Chong (代冲冲), Liu Xue-Chao (刘学超), Zhou Tian-Yu (周天宇), Zhuo Shi-Yi (卓世异), Shi Biao (石彪), Shi Er-Wei (施尔畏) |
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Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC |
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Chin. Phys. B
2014 Vol.23 (6): 66803-066803
[Abstract]
(533)
[HTML 1 KB]
[PDF 717 KB]
(323)
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47205 |
Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇) |
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Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes |
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Chin. Phys. B
2010 Vol.19 (4): 47205-047205
[Abstract]
(1529)
[HTML 1 KB]
[PDF 459 KB]
(1784)
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2142 |
Guo Hui(郭辉), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation |
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Chin. Phys. B
2006 Vol.15 (9): 2142-2145
[Abstract]
(1128)
[HTML 1 KB]
[PDF 262 KB]
(726)
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